| PART |
Description |
Maker |
| STF28N60DM2 |
Extremely high dv/dt ruggedness
|
STMicroelectronics
|
| P650-U260-WH P650-U180-WH P850-U180-WH P850-U260-W |
Extremely high speed performance
|
Bourns Electronic Solutions
|
| P40-G |
Extremely high speed performance
|
Bourns Electronic Solutions
|
| CMPTA44 |
NPN SILICON EXTREMELY HIGH VOLTAGE TRANSISTOR
|
CENTRAL[Central Semiconductor Corp]
|
| CES2307 |
High dense cell design for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
| FDN327N |
High performance trench technology for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
| CES2302 |
High dense cell design for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
| CES2303 |
High dense cell design for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
| CES2305 |
High dense cell design for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
| AP2122AK-3.0TRG1 AP2122AK-3.3TRG1 |
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
|
Diodes
|
| CMPTA96 |
SURFACE MOUNT PNP SILICON EXTREMELY HIGH VOLTAGE TRANSISTOR
|
CENTRAL[Central Semiconductor Corp]
|
